savantic semiconductor product specification silicon pnp power transistors 2SB1334A d escription with to-220 package wide area of safe operation low collector saturation voltage applications designed for use in low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -80 v v ceo collector- emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -6 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1334A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ,i b =0 -80 v v (br)cbo collector-base breakdown voltage i c =-50a ,i e =0 -80 v v (br)ebo emitter- base breakdown voltage i e =-50a ,i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v v besat base-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -10 a i ebo emitter cut-off current v eb =-4v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-5v 60 320 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 100 pf f t transition frequency i e =0.5a ; v ce =-5v 12 mhz h fe classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1334A package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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